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inchange semiconductor product specification silicon npn power transistors 2SC4793 description ? with to-220f package ? complement to type 2sa1837 ? high transition frequency applications ? power amplifier applications ? driver stage amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 230 v v ceo collector-emitter voltage open base 230 v v ebo emitter-base voltage open collector 5 v i c collector current 1 a i b base current 0.1 a t c =25 ?? 20 p c collector dissipation t a =25 ?? 2.0 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC4793 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 230 v v cesat collector-emitter saturation voltage i c =0.5a i b =50ma 1.5 v v be base-emitter voltage i c =0.5a ; v ce =5v 1.0 v i cbo collector cut-off current v cb =230v; i e =0 1.0 | a i ebo emitter cut-off current v eb =5v; i c =0 1.0 | a h fe dc current gain i c =0.1a ; v ce =5v 100 320 c ob output capacitance i e =0; v cb =10v;f=1mhz 20 pf f t transition frequency i c =0.1a ; v ce =10v 100 mhz
inchange semiconductor product specification 3 silicon npn power transistors 2SC4793 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC4793

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